no (source 1 ) com nc (source 2 ) 1 2 3 6 5 top view in v+ gnd 4 sc-70 device marking: e8xx dg2711 vishay siliconix new product document number: 73200 s-42089?rev. a, 15-nov-04 www.vishay.com 1 low-voltage, sub-ohm, spdt analog switch features low voltage operation (1.6 v to 3.6 v) low on-resistance - r ds(on) : 0.44 typ. fast switching - t on : 25 ns, t off : 14 ns low leakage ttl/cmos compatible 6-pin sc-70 package benefits reduced power consumption simple logic interface high accuracy reduce board space applications cellular phones communication systems portable test equipment battery operated systems sample and hold circuits description the dg2711 is a sub-ohm single-pole/double-throw monolithic cmos analog switch designed for high performance switching of analog signals. combining low power, high speed (t on : 25 ns, t off : 14 ns), low on-resistance (r ds(on) : 0.44 ) and small physical size (sc70), the dg2711 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. the dg2711 is built on vishay siliconix?s low voltage submicron cmos process. an epitaxial layer prevents latchup. break-before-make is guaranteed for dg2711. each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. as a committed partner to the community and the environment, vishay siliconix manufactures this product with the lead (pb)-free device terminations. for analog switching products manufactured with 100% matte tin device terminations, the lead (pb)-free ??e3? suffix is being used as a designator. functional block diagram and pin configuration truth table logic nc no 0 on off 1 off on ordering information temp range package part number -40 to 85 c sc70-6 dg2711dl-t1?e3
dg2711 vishay siliconix new product www.vishay.com 2 document number: 73200 s-42089?rev. a, 15-nov-04 absolute maximum ratings reference to gnd v+ -0.3 to +4 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . in, com, nc, no a -0.3 to (v+ + 0.3 v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous current (no, nc and com pins) 200 ma . . . . . . . . . . . . . . . . peak current 300 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (pulsed at 1 ms , 10% duty cycle) storage temperature (d suf fix) -65 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation (packages) b 6-pin so70 c 250 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by internal diodes. limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 3.1 mw/ c above 70 c stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (v+ = 1.8 v) test conditions otherwise unless specified limits ? 40 to 85 c parameter symbol v+ = 1.8 v, 10%, v in = 0.4 or 1.0 v e temp a min b typ c max b unit analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 1.8 v, v com = 0.9 v, i no , i nc = 100 ma room full 0.8 2.0 2.5 switch off leakage current f i no(off), i nc(off) v+ = 2.2 v room full d ? 1 ? 10 1 10 switch off leakage current f i com(off) v+ = 2 . 2 v v no, v nc = 0.2 v/2.0 v, v com = 2.0 v/0.2 v room full d ? 1 ? 10 1 10 na channel-on leakage current f i com(on) v+ = 2.2 v, v no, v nc = v com = 0.2 v/2.0 v room full d ? 1 ? 10 1 10 digital control input high voltage v inh full 1.0 v input low voltage v inl full 0.4 v input capacitance d c in full 5 pf input current f i inl or i inh v in = 0 or v+ full ? 1 1 a dynamic characteristics turn-on time d t on v v 15 v r 300 c 35 f room full d 36 60 62 turn-off time d t off v no or v nc = 1.5 v, r l = 300 , c l = 35 pf figures 1 and 2 room full d 22 42 44 ns break-before-make time d t d room 3 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 , figure 3 room 20 pc off-isolation d oirr r l = 50 c l = 5 pf f = 1 mhz room ? 56 db crosstalk d x talk r l = 50 , c l = 5 pf, f = 1 mhz room ? 56 db no, nc off capacitance d c no(off), c nc(off) v in = 0 or v+, f = 1 mhz room 73 pf channel-on capacitance d c on v in = 0 or v+ , f = 1 mhz room 167 pf
dg2711 vishay siliconix new product document number: 73200 s-42089?rev. a, 15-nov-04 www.vishay.com 3 specifications (v+ = 3.0 v) test conditions otherwise unless specified limits ? 40 to 85 c parameter symbol v+ = 3 v, 10%, v in = 0.5 or 1.4 v e temp a min b typ c max b unit analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 2.7 v, v com = 1.5 v, i no i nc = 100 ma room full 0.44 0.6 0.7 r on flatness r on flatness v+ = 2.7 v, v com = 0.6 v, 1.5 v, i no i nc = 100 ma room 0.14 0.2 r on match r on v+ = 2.7 v, v com = 1.5 v, i no , i nc = 100 ma room 0.07 switch off leakage current i no(off), i nc(off) v+ = 3.3 v room full ? 1 ? 10 1 10 switch off leakage current i com(off) v+ = 3 . 3 v v no, v nc = 0.3 v/3 v, v com = 3 v/0.3 v room full ? 1 ? 10 1 10 na channel-on leakage current i com(on) v+ = 3.3 v, v no, v nc = v com = 0.3 v/3 v room full ? 1 ? 10 1 10 digital control input high voltage v inh full 1.4 v input low voltage v inl full 0.5 v input capacitance d c in full 5 pf input current f i inl or i inh v in = 0 or v+ full ? 1 1 a dynamic characteristics turn-on time t on v v 15 v r 300 c 35 f room full 25 46 48 turn-off time t off v no or v nc = 1.5 v, r l = 300 , c l = 35 pf figure 1 and 2 room full 14 38 40 ns break-before-make time t d room 1 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 , figure 3 room 28 pc off-isolation d oirr r l = 50 c l = 5 pf f = 1 mhz room ? 56 db crosstalk d x talk r l = 50 , c l = 5 pf, f = 1 mhz room ? 56 db no, nc off capacitance d c no(off), c nc(off) v in = 0 or v+, f = 1 mhz room 70 pf channel-on capacitance d c on v in = 0 or v+ , f = 1 mhz room 163 pf power supply power supply range v+ 1.6 3.6 v power supply current i+ v+ = 3.6 v, v in = 0 or v+ 0.01 1.0 a notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data s heet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, nor subjected to production test. e. v in = input voltage to perform proper function. f. guaranteed by 3-v leakage testing, not production tested.
dg2711 vishay siliconix new product www.vishay.com 4 document number: 73200 s-42089?rev. a, 15-nov-04 typical characteristics (25 c unless noted) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 m ? 60 ? 40 ? 20 0 20 40 60 80 100 100 0.1 10 ? 60 ? 40 ? 20 0 20 40 60 80 100 supply current vs. input switching frequency input switching frequency (hz) 10 k 1 m 10 m 100 k 1 k 100 10 10000 1000 1 supply current vs. temperature temperature ( c) i+ ? supply current (na) ? on-resistance ( r on ) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ? 300 ? 250 ? 200 ? 150 ? 100 ? 50 0 50 100 150 200 250 300 0.00 0.55 1.10 1.65 2.20 2.75 3.30 leakage current vs. temperature leakage vs. analog voltage v com , v no , v nc ? analog voltage r on vs. v com and single supply voltage v com ? analog voltage (v) r on vs. analog voltage and temperature ? on-resistance ( r on ) v com ? analog voltage (v) 10 v+ = 3 v v in = 0 v i+ ? supply current (a) leakage current (pa) temperature ( c) 1000 v+ = 3.3 v i no(off) /i nc(off) i com(on) i com(off) leakage current (pa) v+ = 3.3 v 1 m 100 10 1 10 n 100 n t = 25 c i s = 100 ma v+ = 3.0 v i s = 100 ma 85 c ? 40 c 25 c 100 v+ = 3 v 1 n 10 m ? v+ = 1.6 v ? v+ = 1.8 v ? v+ = 2.0 v ? v+ = 2.5 v ? v+ = 2.7 v ? v+ = 3.0 v ? v+ = 3.3 v ? v+ = 3.6 v 1 ? i com(off) ? i no(off) /i nc(off) ? i com(on)
dg2711 vishay siliconix new product document number: 73200 s-42089?rev. a, 15-nov-04 www.vishay.com 5 typical characteristics (25 c unless noted) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v+ ? supply voltage (v) v t ? switching threshold (v) switching threshold vs. supply voltage 0 20 40 60 80 100 120 140 160 180 200 220 240 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 90 ? 20 10 loss, oirr, x insertion loss, off-isolation, crosstalk vs. frequency frequency (hz) ? 10 0 0 5 10 15 20 25 30 35 40 ? 60 ? 40 ? 200 20406080100 t on v+ = 1.8 v switching time vs. temperature temperature ( c) 10 m 1 g 100 m 1 m 100 k t on ,t off ? switching time (ns) t on v+ = 3.0 v t off v+ = 2.0 v t off v+ = 3.0 v ? 30 ? 40 ? 50 ? 60 ? 70 ? 80 talk (db) v+ = 3 v r l = 50 loss oirr x talk v com ? analog voltage (v) q ? charge injection (pc) charge injection vs. analog voltage v+ = 1.8 v v+ = 3 v t on v+ = 2.0 v t off v+ = 1.8 v
dg2711 vishay siliconix new product www.vishay.com 6 document number: 73200 s-42089?rev. a, 15-nov-04 test circuits figure 1. switching time figure 2. break-before-make interval figure 3. charge injection c l (includes fixture and stray capacitance) nc v no no switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50% 0 v logic input switch output t on t off logic ?1? = switch on logic input waveforms inverted for switches that have the opposite logic sense. off on on in v out v out q = v out x c l c l = 1 nf com r gen v out nc or no v in = 0 ? v+ in v gen gnd v+ v+ switch output v out v com r l r l r on 0.9 x v out t r 5 ns t f 5 ns in depends on switch configuration: input polarity determined by sense of switch. + v nc 0 v logic input switch output v o v nc = v no t r <5 ns t f <5 ns 90% t d t d in com v+ gnd v+ c l 35 pf v o r l 50 v inh v inl v inh v inl
dg2711 vishay siliconix new product document number: 73200 s-42089?rev. a, 15-nov-04 www.vishay.com 7 test circuits figure 4. off-isolation figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+ in gnd nc or no 0v, 2.4 v 10 nf com off isolation 20 log v com v no nc r l analyzer v+ v+ vishay siliconix maintains worldw ide manufacturing capability. pr oducts may be manufactured at on e of several q ualified locati ons. reliability data fo r silicon te chnology and package reliability represent a co mposite of all qualifie d locations. for relate d documents such as pa ckage/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73200 .
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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